Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si have been investigated. Compressive stress induced by backside SiO 2 film on the silicon substrate was found to retard significantly the formation of Ni 2 Si, NiSi and NiSi 2 on (0 0 1)Si. On the other ha
β¦ LIBER β¦
Time-resolved study of thin nickel silicide layer growth at the nickel film-Si(100) interface
β Scribed by P.K. John; H. Frolich; A.C. Rastogi; B.Y. Tong
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 299 KB
- Volume
- 164
- Category
- Article
- ISSN
- 0040-6090
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