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Time-resolved reflectivity of ion-implanted silicon during laser annealing

โœ Scribed by Auston, D. H.; Surko, C. M.; Venkatesan, T. N. C.; Slusher, R. E.; Golovchenko, J. A.

Book ID
120260196
Publisher
American Institute of Physics
Year
1978
Tongue
English
Weight
613 KB
Volume
33
Category
Article
ISSN
0003-6951

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Polycrystalline silicon layers of grains with an average diameter of 100 nm and with a thickness of 500 nm grown on an amorphous SiO2 layer are implanted with a dose of 4 x 10 is cm-2 boron ions at an ion energy of 25 keV and subsequently annealed up to maxima of 950ยฐC and/or 300 s with a scanned an