Time-Resolved Reflectivity Measurements on RF Sputtered a-Si:H Alloy

✍ Scribed by Juh Tzeng Lue

• Book ID: 104548949
• Publisher: John Wiley and Sons
• Year: 1984
• Tongue: English
• Weight: 416 KB
• Volume: 126
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.2221260231

✦ Synopsis

Abstract

Photoinduced carrier lifetimes of RF sputtered a‐Si:H alloy are measured by time‐resolved reflectivity and photoconductivity decay methods. Both experiments indicate a lifetime of about 5 μs. A calculation of the relaxation time of photogenerated carriers from extended mobility edge to midgap localized states satisfactorily agrees with this value.