We present results of time-resolved photoluminescence experiments performed at 77 K on a GaInAs/AlGaInAs superlattice grown by molecular beam epitaxy and lattice matched to an InP substrate. The superlattice is the intrinsic part of a p-i-n diode. Photoluminescence spectra, reconstructed at various
Time-resolved absorption studies of the ZnSe/ZnSTe superlattice
β Scribed by H. Wang; I.K. Sou; G.K.L. Wong; K.S. Wong
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 251 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0749-6036
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β¦ Synopsis
The time-resolved differential absorption of the ZnSe/ZnSTe superlattice is studied using femtosecond pump-probe measurements. Transient spectral hole burning due to the initial nonthermal carrier distribution is observed at zero time delay and the carriers are thermalized within 0.5 ps. The high-energy tail of the differential absorption spectra was used to deduce the effective temperature of the thermalized carriers. Rapid hot-carrier cooling from a temperature of 763 to 450 K within the first 4 ps is observed, with carrier cooling slowing down hence. This initial fast hot-carrier cooling is consistent with the strong carrier-phonon interaction in large gap II-VI semiconductors.
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