A deeper understanding of quantum effects in nano-electronic devices helps to improve the functionality and to develop new device types. The performance of carbon nanotube (CNT) field-effect transistor is studied using the non-equilibrium Green's function (NEGF) formalism. The effects of elastic and
β¦ LIBER β¦
Time-dependent quantum transport and nonquasistatic effects in carbon nanotube transistors
β Scribed by Chen, Yupeng; Ouyang, Yijian; Guo, Jing; Wu, Thomas X.
- Book ID
- 121219426
- Publisher
- American Institute of Physics
- Year
- 2006
- Tongue
- English
- Weight
- 433 KB
- Volume
- 89
- Category
- Article
- ISSN
- 0003-6951
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