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Numerical study of quantum transport in carbon nanotube transistors

โœ Scribed by M. Pourfath; H. Kosina; S. Selberherr

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
379 KB
Volume
79
Category
Article
ISSN
0378-4754

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โœฆ Synopsis

A deeper understanding of quantum effects in nano-electronic devices helps to improve the functionality and to develop new device types. The performance of carbon nanotube (CNT) field-effect transistor is studied using the non-equilibrium Green's function (NEGF) formalism. The effects of elastic and inelastic scattering and the impact of parameters, such as electron-phonon coupling strength and phonon energy, on the device performance are analyzed.

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