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Electronic structure of defects and quantum transport in carbon nanotubes

โœ Scribed by Jae-Hyeon Eom; Hoonkyung Lee; Jino Im; Changwon Park; Byoung Wook Jeong; Seungchul Kim; Jisoon Ihm

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
327 KB
Volume
376-377
Category
Article
ISSN
0921-4526

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A deeper understanding of quantum effects in nano-electronic devices helps to improve the functionality and to develop new device types. The performance of carbon nanotube (CNT) field-effect transistor is studied using the non-equilibrium Green's function (NEGF) formalism. The effects of elastic and