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Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

✍ Scribed by Lelis, A.J.; Habersat, D.; Green, R.; Ogunniyi, A.; Gurfinkel, M.; Suehle, J.; Goldsman, N.

No coin nor oath required. For personal study only.

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