TiAl3 formation kinetic in sputtered Ti/AlCu0.5% thin films

✍ Scribed by C Bresolin; S Pirotta

• Book ID: 104305733
• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 275 KB
• Volume: 64
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(02)00776-1

✦ Synopsis

Sputtered aluminum on titanium double layers are widely used in conventional interconnection schemes of integrated circuits (IC); one known phenomenon is the formation of intermetallic compounds. In this work, the kinetic of the TiAl reaction is studied by collecting the sheet resistance increase of 400 nm AlCu0.5% on 10 3 nm titanium sputtered samples, in situ annealed at three different temperatures (450, 480 and 500 8C). The observed resistance drift is correlated to the expected aluminum consumption and the TEM observed TiAl 3 grain morphology; by adopting an exponential fit of observed resistance curves, the activation energy of the TiAl formation is found out to be 1.7560.25 eV.

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