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Threshold shift calculations for ion implanted MOS devices : M. R. MacPherson. Solid St. Electron. 15 (1972), p. 1319

Publisher: Elsevier Science
Year: 1973
Tongue: English
Weight: 172 KB
Volume: 12
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(73)90581-7

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