Threshold current density in ZnS/MgBeZnS quantum well ultraviolet lasers
β Scribed by Chikara Onodera; Masaaki Yoshida; Tadayoshi Shoji; Tsunemasa Taguchi
- Book ID
- 106255937
- Publisher
- Optical Society of Japan
- Year
- 2010
- Tongue
- English
- Weight
- 72 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1340-6000
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π SIMILAR VOLUMES
## Abstract We have theoretically demonstrated population inversion between two conduction subbands in a silicon quantum well in a tripleβwell structure with Si and SiGe, considering tunneling, radiativeβ and nonβradiativeβacoustic, and __g__βphonon transitions. The gain spectra are then calculated
We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.