✦ LIBER ✦

Three-Dimensional Chemical Characterization of Electronic Materials || Noise, Resolution and Entropy in Sputter Profiling

✍ Scribed by M. G. Dowsett and R. Collins

Book ID: 123646128
Publisher: The Royal Society
Year: 1996
Tongue: English
Weight: 543 KB
Volume: 354
Category: Article
ISSN: 0264-3952
DOI: 10.2307/54737

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Three-Dimensional Chemical Characterizat

Three-Dimensional Chemical Characterization of Electronic Materials || Preface

✍ Mark Dowsett and Chris Hill 📂 Article 📅 1996 🏛 The Royal Society 🌐 English ⚖ 74 KB

Three-Dimensional Chemical Characterizat

Three-Dimensional Chemical Characterization of Electronic Materials || Standards for Surface Analysis: A Clash between Bureaucracy and Science?

✍ M. P. Seah 📂 Article 📅 1996 🏛 The Royal Society 🌐 English ⚖ 395 KB

Three-Dimensional Chemical Characterizat

Three-Dimensional Chemical Characterization of Electronic Materials || Transient Phenomena and Impurity Relocation in SIMS Depth Profiling using Oxygen Bombardment: Pursuing the Physics to Interpret the Data [and Discussion]

✍ K. Wittmaack and I. W. Drummond 📂 Article 📅 1996 🏛 The Royal Society 🌐 English ⚖ 925 KB

Depth resolution in sputter depth profil

Depth resolution in sputter depth profiling-characterization of a third batch of tantalum pentoxide on tantalum certified reference material by AES and SIMS

✍ Seah, M. P.; Spencer, S. J.; Gilmore, I. S.; Johnstone, J. E. 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 318 KB 👁 2 views

Depth profiles have been made for a new batch of the certified reference material, BCR 261, of ~30 nm and 100 nm of anodic tantalum pentoxide layers on tantalum foil. Atomic force microscopy studies show that the preparation method traditionally used provides an excellent substrate root-mean-square