thin films: Towards a first-order metal-insulator transition
β Scribed by Ogale, Anjali S.; Shinde, S. R.; Kulkarni, V. N.; Higgins, J.; Choudhary, R. J.; Kundaliya, Darshan C.; Polleto, T.; Ogale, S. B.; Greene, R. L.; Venkatesan, T.
- Book ID
- 120183613
- Publisher
- The American Physical Society
- Year
- 2004
- Tongue
- English
- Weight
- 101 KB
- Volume
- 69
- Category
- Article
- ISSN
- 1098-0121
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Conductivity and electron tunneling measurements are reported for amorphous, oxygen rich Ti films in the vicinity of the Anderson metal-insulator transition. In the metallic films the conductivity varies proportional to ~/-T, while for the insulating films the Mott variable range hopping process is
Results are reported for YbFe 4 Sb 12 thin films grown by pulsed laser deposition (PLD) with thicknesses (t) 60004t4300 A Λ. Thick films (t41000 A Λ) show electrical transport behavior typical of bulk specimens. Surprisingly, a metal to insulator transition (MIT) is observed for films with to1000 A