𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Thin film semiconductor deposition on free-standing ZnO columns

✍ Scribed by Könenkamp, R.; Boedecker, K.; Lux-Steiner, M. C.; Poschenrieder, M.; Zenia, F.; Levy-Clement, C.; Wagner, S.

Book ID
120576432
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
474 KB
Volume
77
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.

✦ Synopsis

We report the deposition of a-Si:H on thin films of free-standing single crystalline ZnO columns. The ZnO columns have a height of several μm and a diameter between 100 and 200 nm. The ZnO films are prepared in electrodeposition and have considerable potential for use in photoelectric thin film devices. Morphology, electronic parameters, and basic optical behavior, such as reflectance and light trapping efficiency, are reported. Amorphous silicon is deposited on the columns as a continuous smooth film with conformal coverage. Some possibilities of using these films in devices are discussed.

📜 SIMILAR VOLUMES

Initial stages of EuBa2Cu3O7 thin film d
Initial stages of EuBa2Cu3O7 thin film deposited on a ZnO semiconductor
✍ Y. Ota; Y. Kimura; O. Michikami 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 336 KB

ZnO thin films were deposited on R-Al 2 O 3 substrates by reactive RF magnetron sputtering in an Ar + O 2 mixture using a Zn metal target at a substrate temperature of 300 °C. ZnO thin films deposited on R-Al 2 O 3 substrates showed (1 1 0) orientation. C-axis-oriented EuBCO thin films were grown by