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Thickness dependent reactivity and coercivity for ultrathin Co/Si(111) films

✍ Scribed by C. Chuang; W.Y. Chang; W.H. Chen; J.S. Tsay; W.B. Su; H.W. Chang; Y.D. Yao

Book ID: 113936951
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 500 KB
Volume: 519
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.03.089

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## Abstract The morphology and electrical resistivity of ultrathin Al metal films grown on (111) Si substrates using molecular‐beam epitaxy have been investigated. For thickness <60 nm, the film morphology consists of a two‐dimensional network of Al islands, which grows via Volmer–Weber mechanism.