## Abstract The morphology and electrical resistivity of ultrathin Al metal films grown on (111) Si substrates using molecular‐beam epitaxy have been investigated. For thickness <60 nm, the film morphology consists of a two‐dimensional network of Al islands, which grows via Volmer–Weber mechanism.
✦ LIBER ✦
Thickness dependence of the initial oxidation behaviors of Gd films grown on Si by laser molecular beam epitaxy
✍ Scribed by Dawei Yan 阎大伟, Hong Zhang, Li Bai, Xuemin Wang, Weibin Zhang, Yuying Wang, Changle Shen, Liping Peng, Weidong Wu 吴卫东
- Book ID
- 113085843
- Publisher
- Wuhan University of Technology
- Year
- 2012
- Tongue
- English
- Weight
- 267 KB
- Volume
- 27
- Category
- Article
- ISSN
- 1000-2413
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