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Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX_{2} semiconductors (M = Mo, W; X = S, Se, Te)

✍ Scribed by Yun, Won Seok; Han, S.; Hong, Soon Cheol; Kim, In Gee; Lee, J.

Book ID: 111982387
Publisher: The American Physical Society
Year: 2012
Tongue: English
Weight: 578 KB
Volume: 85
Category: Article
ISSN: 1098-0121
DOI: 10.1103/physrevb.85.033305

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