Electronic structure of transition metal dichalcogenides monolayers 1H-MX2(M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors

✍ Scribed by Kumar, A.; Ahluwalia, P. K.

• Book ID: 114995071
• Publisher: Springer
• Year: 2012
• Tongue: English
• Weight: 694 KB
• Volume: 85
• Category: Article
• ISSN: 1434-6036
• DOI: 10.1140/epjb/e2012-30070-x