## Abstract In this paper the breakdown field strength and resistivity of sputter‐deposited Al~2~O~3~, SiO~2~ and Si~3~N~4~ layers are investigated in the temperature range between room temperature and 400 °C. All the investigated layers showed excellent insulation properties, even at elevated samp
✦ LIBER ✦
Thermophysical properties of electrical insulation after multiple cooling and irradiation at temperatures of 4.2–400 K
✍ Scribed by S. A. Tanaeva; L. E. Evseeva
- Book ID
- 104979214
- Publisher
- Springer US
- Year
- 1994
- Tongue
- English
- Weight
- 270 KB
- Volume
- 66
- Category
- Article
- ISSN
- 1573-871X
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