An Ag+-sensitive ion-selective field effect transistor (ISLET) is prepared by deposition of the copolymer cyanopropyl methyl (lo-12%)-dimethylsiloxane (88~90%) on the silica gate insulator. The corresponding REFET (reference field effect transistor) is prepared by deposition of polymethyl hexyl silo
Thermogravimetric study of silica with a chemically modified surface
✍ Scribed by T. Żmijewski; M. Mioduska; B. Pacewska
- Publisher
- Springer Netherlands
- Year
- 1987
- Tongue
- English
- Weight
- 265 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0022-5215
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