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Ag+-sensitive ISFET with a chemically modified silica surface

✍ Scribed by A. Bouazizi; H. Maaref; N. Jaffrezic-Renault

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
272 KB
Volume
295
Category
Article
ISSN
0003-2670

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✦ Synopsis

An Ag+-sensitive ion-selective field effect transistor (ISLET) is prepared by deposition of the copolymer cyanopropyl methyl (lo-12%)-dimethylsiloxane (88~90%) on the silica gate insulator. The corresponding REFET (reference field effect transistor) is prepared by deposition of polymethyl hexyl siloxane onto the silica gate insulator. The response of the differential system is 51 mV pAg-' in the pAg range of 1 to 3 and 4.3 mV pH-' in the pH range of 3 to 8. The response time is lower than 1 s and the life time more is than one month.

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