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Thermoelectrical properties of In1-xGaxAs and InAs crystals irradiated with fast electrons

✍ Scribed by M. I. Aliyev; Sh. Sh. Rashidova; I. M. Aliyev; M. A. Huseynova; M. A. Jafarova

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
108 KB
Volume
39
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

The thermoelectric power in In~1‐x~Ga~x~As (x = 0,01;0,04) solid solutions and InAs crystals irradiated with fast electrons by the energy of 6 MeV and dose of 10^16^‐ 2 x 10^17^ el/cm^‐2^ on the interval 80‐400 K have been investigated. It is revealed that in the all crystals the value of the thermoelectric power is decreased under irradiation that resulted from the growth of the free electron concentration to form radiation induced defects of the donor type. It has been determined that in the initial InAs after irradiation, the charge carriers scatter on optical phonons and in In~1‐x~Ga~x~As solid solutions they do on optical phonons and ionized impurities. (Β© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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