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Thermodynamic stability of bulk and epitaxial Ge1−xSnxsemiconductor alloys

✍ Scribed by V. G. Deibuk; Yu. G. Korolyuk


Book ID
110132579
Publisher
Springer
Year
2002
Tongue
English
Weight
56 KB
Volume
36
Category
Article
ISSN
1063-7826

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Single-crystal Ge 1 À x Sn x alloys (x ¼ 0.025, 0.052, and 0.078) with diamond cubic structure have been grown on Si(0 0 1) substrates by molecular beam epitaxy (MBE), using high-quality Ge thin films as buffer layers. The Ge 1 À x Sn x alloys are nearly fully strained and have high crystalline qual