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Thermodynamic model of metal-induced self-assembly of Ge quantum dots on Si substrates

โœ Scribed by X. L. Li; G. Ouyang; G. W. Yang


Book ID
111622587
Publisher
Springer
Year
2008
Tongue
English
Weight
445 KB
Volume
62
Category
Article
ISSN
1434-6036

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Self-assembled InAs quantum dots on anti
โœ W. Tantiweerasophon; S. Thainoi; P. Changmuang; S. Kanjanachuchai; S. Rattanatha ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 664 KB

The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with Ga