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Thermodynamic analysis of the deposition of GaAs epitaxial layers prepared by the MOCVD method

✍ Scribed by Jindřich Leitner; Jan Mikulec; Petr Von̆ka; Josef Stejskal; Rudolf Hladina; Přemysl Klíma


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
619 KB
Volume
112
Category
Article
ISSN
0022-0248

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Epitaxial Deposition of GaAs in the Ga (
✍ Dr. W.-H. Petzke; Dr. V. Gottschalch; Prof. Dr. sc. E. Butter 📂 Article 📅 1974 🏛 John Wiley and Sons 🌐 English ⚖ 404 KB 👁 1 views

## Abstract For reactions taking place between the species Ga, As~2~, As~4~, AsH~3~, and H~2~, the equilibrium constants were calculated. The discussion indicates that factors other than thermodynamic considerations significantly influence the deposition process. Kinetic investigations demonstrate