Thermodynamic analysis of chemical vapour deposition from methoxysilanes

✍ Scribed by D. W. Skaf; K. E. Burns

• Publisher: Springer
• Year: 1995
• Tongue: English
• Weight: 518 KB
• Volume: 30
• Category: Article
• ISSN: 0022-2461
• DOI: 10.1007/bf00349661

✦ Synopsis

Thermodynamic equilibrium calculations for the systems n-methoxysilane, SiH4-,(OCH3)n, n = 1-4, were performed using the STANJAN computer code. The required enthalpy and entropy data for the methoxysilanes were estimated using the MOPAC computer program for semi-empirical molecular orbital calculations. The calculated solid-phase compositions were not sensitive to + 10% changes in the n-methoxysilane enthalpy and entropy values. For n = 2, 3 or 4, the equilibrium solids were comprised of SiO2 and C. The purest SiO2 was predicted for 2-MEOS at atmospheric pressure, low temperature, and an excess of hydrogen. For all n-methoxysilanes, the solid carbon content increased rapidly at moderate temperatures but did not continue to increase at the highest temperatures.