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Thermochemical Hole Burning on a Series of N-Substituted Morpholinium 7,7,8,8-Tetracyanoquinodimethane Charge-Transfer Complexes for Data Storage

✍ Scribed by Ran, Chunbo; Peng, Hailin; Zhou, Wei; Yu, Xuechun; Liu, Zhongfan

Book ID: 125473404
Publisher: American Chemical Society
Year: 2005
Tongue: English
Weight: 253 KB
Volume: 109
Category: Article
ISSN: 0022-3654
DOI: 10.1021/jp0528616

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Fabrication and Characterization of the Memory Device: The indium tin oxide (ITO)/glass substrate was pre-cleaned with water, acetone, and isopropanol, in that order, in an ultrasonic bath for 15 min. A toluene solution of PKEu (15 mg mL ±1 ) was spin-coated onto ITO, followed by solvent removal in