Scanning-Tunneling-Microscopy Based Thermochemical Hole Burning on a New Charge-Transfer Complex and Its Potential for Data Storage
✍ Scribed by H. L. Peng; C. B. Ran; X. C. Yu; R. Zhang; Z. F. Liu
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 447 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0935-9648
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✦ Synopsis
Fabrication and Characterization of the Memory Device: The indium tin oxide (ITO)/glass substrate was pre-cleaned with water, acetone, and isopropanol, in that order, in an ultrasonic bath for 15 min. A toluene solution of PKEu (15 mg mL ±1 ) was spin-coated onto ITO, followed by solvent removal in a vacuum chamber at 10 ±5 torr (1 torr = 133 Pa) at room temperature. The thickness of the polymer layer was about 50 nm. Finally, the 100 nm thick square Al electrodes for needle contacts were thermally evaporated at a pressure around 10 ±7 torr. Cyclic voltammetry (CyV) was performed using an Autolab potentiostat/galvanostat under an argon atmosphere. Transmission electron microscopy (TEM) measurements were carried out on a JEOL JEM-2010F field emission electron microscope equipped with a GATAN Multiscan camera. Other electrical measurements were carried out on a HP 4156A semiconductor parameter analyzer under ambient conditions.