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Thermally induced strain in MBE grown GaN layers

✍ Scribed by Heinke, H; Kirchner, V; Einfeldt, S; Birkle, U; Hommel, D


Book ID
108342726
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
145 KB
Volume
189-190
Category
Article
ISSN
0022-0248

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This work presents a comparative study of the growth by plasma-assisted molecular beam epitaxy (MBE) of GaN layers on four different substrates: Si(111), Al 2 O 3 (0001), GaN/Al 2 O 3 and ELOG GaN/Al 2 O 3 templates. Optimization of the growth parameters for the case of growth of GaN layers on silic