Surface Potential at as-Grown GaN(0001) MBE Layers

Surface and defect microstructure of GaN

Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H–SiC(0001) substrates

✍ Z.J. Reitmeier; S. Einfeldt; R.F. Davis; Xinyu Zhang; Xialong Fang; S. Mahajan 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 875 KB

Hydrogen-etching of 6H-SiC(0001) substrates removed mechanical polishing damage and produced an array of parallel, unit cell high steps. The initial stage of AlN deposition on these etched substrates occurred via island nucleation, both on step edges and on terraces. Coalesced AlN films did not show