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Thermalization and recombination of excess carriers in A-Si:H

✍ Scribed by R. Fischer; W. Rehm; J. Stuke; U. Voget-Grote


Book ID
118331106
Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
374 KB
Volume
35-36
Category
Article
ISSN
0022-3093

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Recombination of Impact Ionized Excess C
✍ A. Bringer; G. Nimtz πŸ“‚ Article πŸ“… 1971 πŸ› John Wiley and Sons 🌐 English βš– 368 KB

## Abstract The recombination time of p‐type tellurium was measured dependent on carrier mobility and carrier density at 77 K. Excess carriers were produced by impact ionization in strong electric fields to achieve large excess carrier concentrations. The recombination of the excess carriers was ob