We report the strongly nonlinear dependence of indirect exciton photoluminescence (PL) kinetics on excitation density. In the indirect regime characterized by a slow exciton recombination, at high excitation densities, low magnetic fields, low temperatures, and for samples with small in-plane disord
Thermalization and Photoluminescence Kinetics of Statistically-Degenerate Indirect Excitons in GaAs/AlGaAs Coupled Quantum Wells
β Scribed by Soroko, A.V. ;Ivanov, A.L. ;Butov, L.V.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 121 KB
- Volume
- 190
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
In order to model the very recent experimental data on the relaxation kinetics and photoluminescence (PL) dynamics of indirect excitons in high-quality GaAs/AlGaAs coupled quantum wells (QWs) at extremely low bath temperatures T b ΒΌ 0:05 K, we analyze, both analytically and numerically, the relevant quantum Boltzmann equation. We show that at large delay times after initial optical excitation, thermalization of QW excitons occurs through the nonequilibrium states, weakly correlates with the initial conditions, and depends only upon the two control parameters, T b and the degeneracy temperature T 0 . We present a generic solution of the quantum Boltzmann equation and compare it with the numerical simulations. Finally, we report the experimental and theoretical study on the radiative lifetime t opt of quantum degenerate indirect excitons at low temperatures, 50 mK T b 2 K.
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