In order to model the very recent experimental data on the relaxation kinetics and photoluminescence (PL) dynamics of indirect excitons in high-quality GaAs/AlGaAs coupled quantum wells (QWs) at extremely low bath temperatures T b ΒΌ 0:05 K, we analyze, both analytically and numerically, the relevant
Nonlinear Photoluminescence Kinetics of Indirect Excitons in Coupled Quantum Wells
β Scribed by Butov, L.V. ;Imamoglu, A. ;Shashkin, A.A. ;Dolgopolov, V.T. ;Mintsev, A.V. ;Feklisov, S.G. ;Campman, K.L. ;Gossard, A.C.
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 188 KB
- Volume
- 178
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
We report the strongly nonlinear dependence of indirect exciton photoluminescence (PL) kinetics on excitation density. In the indirect regime characterized by a slow exciton recombination, at high excitation densities, low magnetic fields, low temperatures, and for samples with small in-plane disorder, we observe that the indirect exciton PL intensity increases sharply within a few nanoseconds after the excitation is switched off. This PL intensity jump is also accompanied by a subsequent PL decay rate that increases with excitation density. The effects are observed only when the estimated occupancies of the lowest energy exciton states exceed unity.
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