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Thermal stability of ZnSe epilayer grown by MOVPE

✍ Scribed by Tokuo Yodo; Ken Yamashita

Book ID
103166430
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
556 KB
Volume
93
Category
Article
ISSN
0022-0248

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Non-linear photoluminescence emissions of n-type ZnSe epitaxial layers grown by MOVPE have been studied at low temperature. The processes involved in the spectra of photoluminescence in highly excited ZnSe epilayers are assumed to be a combination of exciton-exciton (P-bands) and electron exciton co