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High quality over-epilayer growth of ZnSe on Li+-implanted ZnSe epilayers by atmospheric pressure MOVPE

โœ Scribed by Tokuo Yodo; Kazuhiro Ueda; Kenji Morio; Ken Yamashita; Shuhei Tanaka

Book ID
107790759
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
280 KB
Volume
107
Category
Article
ISSN
0022-0248

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Growth of high quality of ZnSe epilayers
Growth of high quality of ZnSe epilayers on (001) vicinally oriented GaAs substrate by molecular beam epitaxy
โœ Jin-Sang Kim; Jong-Hyeng Song; Sang-Hee Suh ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 247 KB

We have investigated the structural properties of ZnSe epilayers that were grown by molecular beam epitaxy on (001) GaAs substrate with different tilt angles. Two-dimensional growth mode increased with increasing tilt of (001) GaAs toward [010] direction. This was confirmed by atomic force microscop