Thermal stability of amorphous Ti3Si1O8
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P.H. Giauque; H.B. Cherry; M.-A. Nicolet
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Article
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2001
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Elsevier Science
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English
β 137 KB
Films (220 nm-thick) deposited by reactive rf sputtering from a Ti Si target with an argon / oxygen gas mixture were 3 21 annealed for 30 min in vacuum at temperatures between 400 and 9008C. The films were characterized by 2 MeV He backscattering spectrometry and X-ray diffraction to monitor thermal