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Thermal quenching of photoluminescence from Er-doped GaN thin films

✍ Scribed by J.T Seo; U Hömmerich; D.C Lee; J Heikenfeld; A.J Steckl; J.M Zavada


Book ID
117620779
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
399 KB
Volume
341
Category
Article
ISSN
0925-8388

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This work reports the photoluminescence (PL) study of vanadium-doped GaN (GaN: V) in the 9-300 K range. Samples have been successfully prepared on sapphire substrates by metalorganic vapour phase epitaxy technique (MOVPE). At room temperature (RT) the PL spectra of GaN: V are dominated by a blue ban