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Thermal Mechanism of the Switching Phenomenon

โœ Scribed by Croitoru, N. ;Popescu, C.


Publisher
John Wiley and Sons
Year
1970
Tongue
English
Weight
475 KB
Volume
3
Category
Article
ISSN
0031-8965

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Se 85 Te 10 Bi 5 films of different thicknesses ranging from 126 to 512 nm have been prepared. Energydispersive X-ray (EDX) spectroscopy technique showed that films are nearly stoichiometric. X-ray diffraction (XRD) measurements have showed that the Se 85 Te 10 Bi 5 films were amorphous. Electrical