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Thermal Expansion of Silicon and Zinc Oxide (I)

โœ Scribed by H. Ibach


Publisher
John Wiley and Sons
Year
1969
Tongue
English
Weight
604 KB
Volume
31
Category
Article
ISSN
0370-1972

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This work focuses on a new mathematical framework to model the process of thermal oxidation in silicon. The mathematical model is derived from the fundamental conservation equations of mechanics. The mass balance law provides the description of the oxidant transport and the Si}SiO interface motion,