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Thermal Characterization of SiC Amorphous Thin Films

✍ Scribed by Jeong, Taehee; Zhu, Jian-Gang; Mao, Sining; Pan, Tao; Tang, Yun Jun


Book ID
111953927
Publisher
Springer
Year
2012
Tongue
English
Weight
629 KB
Volume
33
Category
Article
ISSN
0195-928X

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Films (220 nm-thick) deposited by reactive rf sputtering from a Ti Si target with an argon / oxygen gas mixture were 3 21 annealed for 30 min in vacuum at temperatures between 400 and 9008C. The films were characterized by 2 MeV He backscattering spectrometry and X-ray diffraction to monitor thermal