## Abstract 3kV, 600A 4HโSiC highโtemperature flatโpackage diodes have been developed for use in electricity supply. They consist of a pressure contact flat package and include five 6 mm ร 6 mm SiC diode chips. These flatโpackage diodes have a thermal resistance of 0.21 deg/W, which is ten times th
Thermal characteristics of MMIC package
โ Scribed by Feng Cheng; Quanrang Yang
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 130 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0895-2477
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โฆ Synopsis
An analysis of the thermal characteristics of the MMIC package is presented in this paper by solยจing the heat transport equation using the heat balance method. According to the result, which includes the temperature ยจariation, the temperature distribution, and the maximum temperature in the package, the maximum power of the packaged deยจices can be limited in order to protect the packaged circuits from a high temperature.
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