## Abstract The influence of a nonβuniform electric field on the reflectance of light by a semiconductor in the reststrahlen band (phonon electroreflectance) is considered. The calculation is carried out using the phenomenological model in which only the linear term of frequency and oscillator stre
β¦ LIBER β¦
Theory of Plasma Electroreflectance of Light from Semiconductors
β Scribed by N. L. Dmitruk; V. A. Tyagai
- Publisher
- John Wiley and Sons
- Year
- 1971
- Tongue
- English
- Weight
- 324 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0370-1972
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β¦ Synopsis
Abstract
A calculation of the influence of the surface field on the plasma reflection coefficient (plasma electroreflectance) is presented. It is shown that the field and spectral dependences of plasma electroreflectance are significant for the determination of a considerable number of semiconductor parameters (that of free carriers, surface parameters, etc.). An oscillatory behaviour of the plasma electroreflectance is predicted when the Debye screening length is small enough with respect to the spatial inhomogeneity length of the light wave.
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