## Abstract A calculation of the influence of the surface field on the plasma reflection coefficient (plasma electroreflectance) is presented. It is shown that the field and spectral dependences of plasma electroreflectance are significant for the determination of a considerable number of semicondu
On the Theory of Phonon Electroreflectance of Light from Semiconductors
β Scribed by N. L. Dmitruk
- Publisher
- John Wiley and Sons
- Year
- 1973
- Tongue
- English
- Weight
- 307 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0370-1972
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β¦ Synopsis
Abstract
The influence of a nonβuniform electric field on the reflectance of light by a semiconductor in the reststrahlen band (phonon electroreflectance) is considered. The calculation is carried out using the phenomenological model in which only the linear term of frequency and oscillator strength expansions in the local electric field is used for bulk phonons. The integral and differential phonon electroreflectance (PhER) are calculated for an arbitrary relation between wavelength Ξ» and thickness I of the surface space charge region (SCR). The spectral and field dependence of the PhER is analysed.
π SIMILAR VOLUMES
## Abstract The deepness of contactless electroreflectance (CER) probing (__d__~CER~) is investigated in this work. CER spectra have been measured for various semiconductor structures and compared with photoreflectance (PR) spectra. It has been shown that most of CER signal origins from the sample