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Theory of atomic-scale dielectric permittivity at insulator interfaces

✍ Scribed by Giustino, Feliciano; Pasquarello, Alfredo

Book ID
118147156
Publisher
The American Physical Society
Year
2005
Tongue
English
Weight
669 KB
Volume
71
Category
Article
ISSN
1098-0121

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Classified abstracts 3373-3384 11 3373. Some properties of the oxides of the tetrahedral semiconductors and the oxide-semiconductor interfaces. (USA) Continuous-random-network models have been constructed for the Si-SiOl interface. It is found that an abrupt interface with no SiO, layer is possible.