✦ LIBER ✦
Theory of the secondary electron avalanche at electrically stressed insulator-vacuum interfaces
- Publisher
- Elsevier Science
- Year
- 1978
- Tongue
- English
- Weight
- 159 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0042-207X
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✦ Synopsis
Classified abstracts 3373-3384 11 3373. Some properties of the oxides of the tetrahedral semiconductors and the oxide-semiconductor interfaces. (USA) Continuous-random-network models have been constructed for the Si-SiOl interface. It is found that an abrupt interface with no SiO, layer is possible. A simple tight-binding model is described that is applicable for the calculation of the electronic properties of the bulk oxides and the oxide-semiconductor interfaces. Results are given only for selected bulk properties, namely the photoemission and X-ray emission spectra, and the dielectric constants of SiOl, GeOl and various ABO&ype oxides.