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Theory of atom guidance in a hollow laser beam: dressed-atom approach

✍ Scribed by Xu, Xinye; Wang, Yuzhu; Jhe, Wonho

Book ID
115396129
Publisher
Optical Society of America
Year
2000
Tongue
English
Weight
265 KB
Volume
17
Category
Article
ISSN
0740-3224

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A Dressed-Atom Approach to Laser Effects
A Dressed-Atom Approach to Laser Effects in Excitons and Shallow Impurities in Low-Dimensional Semiconductor Heterostructures
✍ Oliveira, L.E. ;LatgοΏ½, A. ;Brandi, H.S. πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 92 KB πŸ‘ 2 views

The dressed-band approach is used to treat the interaction of a laser field with semiconductor GaAs-(Ga,Al)As quantum wells and quantum dots. We adopt the Kane model and a renormalized-mass approximation. We calculate the effects originated by the laser-dressing on exciton energies in quantum-wells