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Theory and breakdown voltage for planar devices with a single field limiting ring

✍ Scribed by Adler, M.S.; Temple, V.A.K.; Ferro, A.P.; Rustay, R.C.

Book ID
114592321
Publisher
IEEE
Year
1977
Tongue
English
Weight
814 KB
Volume
24
Category
Article
ISSN
0018-9383

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## Abstract We investigate the width, spacing, and number dependencies of an Al^+^‐implanted field limiting ring (FLR) and the influence of an Al^+^‐implanted internal ring on the breakdown voltage characteristics of a silicon carbide (SiC) Schottky barrier diode (SBD). SiC‐SBDs having an Al^+^‐imp