𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Theoretical study on hydrogen reaction processes on H/Si(0 0 1) surface

✍ Scribed by N. Takahashi; J. Nara; T. Uda; Y. Nakamura; Y. Tateyama; T. Ohno

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
168 KB
Volume
244
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Adsorption of Ag on Si(1 0 0)
Adsorption of Ag on Si(1 0 0) surface
✍ Shu-yi Wei; Wei Li; Fang Zhang; Xu Zhao πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 165 KB

The chemisorption of one monolayer Ag atoms on an ideal Si(1 0 0) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. The adsorption energies (E ad ) of different sites are calculated. It is found that the adsorbed Ag atoms are more favorable on C site (fo

A theoretical study of Fe adsorption alo
A theoretical study of Fe adsorption along Bi-nanolines on the H/Si(0 0 1) surface
✍ R.H. Miwa; W. Orellana; G.P. Srivastava πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 476 KB

We have investigated the energetic stability and equilibrium geometry of the adsorption of transition metal Fe atoms near the self-organized Bi lines on hydrogen passivated Si(0 0 1) surface. Our total energy results show that there is an attractive interaction between Fe adatoms along the Binanolin

Theoretical study on critical thicknesse
Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN
✍ Wei Zhao; Lai Wang; Jiaxing Wang; Zhibiao Hao; Yi Luo πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 225 KB

When the thickness of InGaN film grown on (0 0 0 1) GaN is beyond a critical value, the compressive strain will be relaxed through dislocation generation or three-dimensional growth. We calculate the InGaN critical thicknesses for dislocation generation and three-dimensional growth depending on the