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Theoretical study of the two-dimensional electron mobility in strained III-nitride heterostructures

✍ Scribed by Yu, Tsung-Hsing; Brennan, Kevin F.

Book ID
111903751
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
349 KB
Volume
89
Category
Article
ISSN
0021-8979

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## Abstract We evaluate the Al~__x__~ Ga~1–__x__~ N/GaN/Al~__y__~ Ga~1–__y__~ N double heterostructure (DH) for heterostructure field‐effect transistor applications, where the GaN quantum well is compressively strained on a relaxed crack‐free Al~__y__~ Ga~1–__y__~ N buffer layer, so that the Al con