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Theoretical Study of Recrystallization Process of Amorphous Ge Layer Subjected to Pulsed Excimer (XeCl) Laser Radiation

✍ Scribed by Mrs. D. Klinger; Prof Dr. J. Auleytner; D. Z̊ymierska


Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
240 KB
Volume
32
Category
Article
ISSN
0232-1300

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